Firm Overview
Services
Attorneys &
Patent
Professionals
News &
Information
Helpful Links
Career
Opportunities
Contact Us
|
|
Srini Chakravarthi, Ph.D.
Phone: (972) 732-1001
Fax: (972) 732-9218
E-mail: chakravarthi@slater-matsil.com
BIOGRAPHY
Srini Chakravarthi, Ph.D. practices in all aspects of intellectual property law relating to patent protection, enforcement, and portfolio management. He enjoys working with his clients to ensure that all aspects of their intellectual property is protected. Prior to joining the firm, Srini worked for many years in R&D and is therefore keenly aware of the technical and business needs of his clients. Consequently, Srini's clients have come to enjoy and appreciate this rich experience especially when combined with his ability to quickly grasp complex technical material.
Srini brings a unique expertise that spans various areas of engineering and science (nanotechnology, materials science, and electrical). Srini's background includes more than six years of technology development at Texas Instruments' flagship research and development division. As a result, Srini developed a broad knowledge base and invaluable experience in various fields of engineering. As an engineer, Srini worked in device design and technology computer aided design, and developed state of the art technologies & numerical models used in multiple technology nodes. Consequently, he is intimately familiar with silicon technology development: from technology definition to product yield.
EDUCATION
Srini received his juris doctor (J.D., cum laude) from the Dedman School of Law at Southern Methodist University in 2011. Srini's graduate education was at the cross-roads of electrical engineering and materials science, and included fundamental modeling of nano scale mechanisms observed during semiconductor fabrication. For this original work, Srini was granted a doctorate in engineering (Ph.D.) from Boston University in 2000. He received his bachelor's engineering degree from Institute of Technology, Banaras Hindu University, India (1995).
MEMBERSHIPS
Srini is a member of the State Bar of Texas and is registered to practice before the United States Patent and Trademark Office.
AWARDS/RECOGNITION
- Dean's list in law school (multiple times: 2007-2011);
- Article's Editor at Science and Technology Law Review (2010-2011);
- Outstanding paper award at International Reliability Physics Symposium 2004 for path-breaking research in the area of PMOS NBTI;
- Elected (2005) to TI's exclusive Technical Ladder in recognition of technical contributions to TI (Member Group of Technical Staff);
- Member TI Patent Review Committee: 2005-2007;
- Symposium organizing committee and session chair at the international meeting of Materials Research Society in 2007;
- Technical Program Committee of the international semiconductor modeling conference (SISPAD) 2006;
- Refereed submissions for a number of scholarly scientific journals; and
- Amongst the top 2% in the Annual National Indian Engineering Entrance Exam (IIT-JEE), 1991.
SPEECHES & PUBLICATIONS
Srini is internationally recognized for contributions in various areas of semiconductor technology. Srini has presented a number of talks, including many invited presentations, in leading international conferences. Srini has authored more than 50 publications in leading journals and conferences. Srini's works have received more than 700 citations. A few of his articles and presentations is listed below.
- "A comprehensive framework for predictive modeling of negative bias temperature instability," S Chakravarthi, A Krishnan, V Reddy, CF Machala, S Krishnan, IEEE International Reliability Physics Symposium Proceedings, 273-282 (2004).
- "Probing negative bias temperature instability using a continuum numerical framework: physics to real world operation," S. Chakravarthi, Microelectronics Reliability, 47, 863-872, Elsevier Science (2007), and International Workshop on Computational Electronics (IWCE-11), Vienna, (2005), (Invited);
- "Atomistic based process modeling for state of the art nanoscale CMOS device design," S. Chakravarthi, NanoTech 2003, Nano Science and Technology Institute, (Invited);
- "Fundamentals of silicon material properties for successful exploitation of strain engineering in modern CMOS manufacturing," P.R. Chidambaram, C. Bowen, S. Chakravarthi, C. Machala, and R. Wise, Special Issue on Non-Classical Si CMOS Devices and Technologies: Extending the Roadmap, IEEE Trans. Elec. Dev., 53, 944- 964, (2006), (Invited Review Paper);
- "Design of CMOS transistors to maximize circuit FOM using a coupled process and mixed-mode simulation methodology," R. Venugopal, S. Chakravarthi, and P.R. Chidambaram, Electron Device Letters, 27, 863 - 865, (2006); and
- "A simple continuum model for boron clustering based on atomistic calculations," S. Chakravarthi and S.T. Dunham, Journal of Applied Physics, 89, 3650-3655, (2001) (American Institute of Physics).
PATENTS
With many critical innovations to his credit, Srini is a named inventor in at least 24 issued US patents.
|
u