Ruojian Zhang
Phone: (972) 732-1001
Fax: (972) 732-9218
E-Mail: zhang@slater-matsil.com

BIOGRAPHY

Ruojian Zhang, a registered patent agent, provides a unique combination of significant research and practical engineering experience. He has obtained advanced engineering degrees and conducted research in microwave technology and solid-state electronics, in both his native China and in the United States, including doctorate level research in solid-state electronics. Ruojian has over 10 years of practical engineering experience, primarily in telecommunications, computer systems, and software design and development.

Ruojian also has over 10 year experience in patent drafting and prosecution. Ruojian is experienced in evaluating and protecting a client's intellectual property for its theoretical and strategic application, as well as for its immediate impact on the client's business objectives. His work has been highly valued in client's patent dispute with competitors. Ruojian is a native speaker of Mandarin Chinese and understands the needs and requirements of both Asian clients and United States clients conducting business in Asia.

EDUCATION

Ruojian graduated with a B.S. in Electrical Engineering in 1987, received a Master's degree in 1990 in Electrical Engineering specializing in Microwave and Electromagnetic Field technology, both from Nanjing University, PRC, and graduated from Southern Methodist University in 1995 with a Master's degree specializing in Solid State Electronics. Ruojian has also undertaken significant research in Solid State Electronics at Southern Methodist University, where he has passed his written and oral examinations for a doctorate degree in Electrical Engineering.

MEMBERSHIPS

Ruojian is registered to practice before the United States Patent and Trademark Office since 2003.

PUBLICATIONS

Ruojian has published a number of technical papers, including:

• Butler, C. and Zhang, R., l/f Noise and Electromigration in Multi-Layered VIA Structures, 39 Solid State Electronics 281 (1996).
• Zhang, R. and Butler, C., Detection of Via Electromigration in VLSI Circuit Metallizations by 1/f Noise Measurements, Six Quantum 1/f Noise and Other Low Frequency Fluctuations in Electronic Devices Symposium, p. 70 (1994).